5.0 References

1. H. Stopper, "An Advanced Version of the Electrically Programmable Hybrid-WSI Substrate", IEEE International Conference on Wafer Scale Integration, 289-293.
   
   
   
2. G. Zhang, C. Hu, P. Yu, S. Chiang, E. Handy, "Characteristic Voltage of Programmed Metal-to-Metal Antifuses", IEEE Electron Device Letters, Vol. 15, No. 5, May 1994, 166-168.
   
   
   
3. K. Gordon, R. Wong, "Conducting Filament of the Programmed Metal Electrode Amorphous Silicon Antifuse", IEEE/IEDM 1993, 27-30.
   
   
   
4. K-L Chen, "A Conductive Channel Size Comparison of Silicon Dielectric and Amorphous Silicon Antifuses", VLSITSA 1993, 165-167.
   
   
   
5. K. Gordon, R. Wong, "Reliability Mechanism of the Unprogrammed Amorphous Silicon Antifuse", IEEE/IRPS 1994, 378-382.
   
   
   
6. M.L. Dreyer, K.Y. Fu, C.J. Varker, "The Effects of Temperature and Microstructure on the Components of Electromigration Mass Transport", IEEE/IRPS 1993, 304-310.
   
   
   
7. X. Gui, S.K. Dew, M. J. Brett, "Thermal Simulation of Thin Film Interconnect Failure Caused by High Current Pulses", IEEE Trans. on Electron Devices, Vol. 42. No. 7, July 1995, 1386-1388.
   
   
   
8. B. Baerg, R. Crandall, K. Wu, "Wide Line, Low Current Electromigration in Al-Cu Metallization with Refractory Underlayer", IEEE/IRPS 1994, 192-197.
   
   
   
9. J. Tao, N. Cheung, C. Hu, "Metal Electromigration Damage Healing Under Bi-directional Current Stress", IEEE Electron Device Letters, Vol. 14, No. 12, Dec. 1993, 554-556.
   
   
   
10. L.M. Ting, J.S. May, W. R. Hunter, J.W. Mc Pherson, "AC Electromigration Characterization and Modeling of Multilayered Interconnects", IEEE/IRPS 1993, 311-316.

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